 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| rev.1.9 _00 battery protection ic for single-cell pack s-8261 series seiko instruments inc. 1 the s-8261 series are lithium-ion / lithium polyme r rechargeable battery protection ics incorporating high- accuracy voltage detection circuit and delay circuit. the s-8261 series are suitable for protection of single-cell lithium ion/lithium polymer battery packs from overcharge, overdischarge and overcurrent. ? features (1) internal high accuracy voltage detection circuit ? overcharge detection voltage 3.9 v to 4.4 v (applicable in 5 mv step) accuracy: 25 mv ( + 25 c) and 30 mv ( ? 5 c to + 55 c) ? overcharge hysteresis voltage 0.0 v to 0.4 v *1 accuracy: 25 mv the overcharge hysteresis voltage can be selected from the range 0.0 v to 0.4 v in 50 mv step. ? overdischarge detection voltage 2.0 v to 3. 0 v (applicable in 10 mv step) accuracy: 50 mv ? overdischarge hysteresis voltage 0.0 v to 0.7 v *2 accuracy: 50 mv the overdischarge hysteresis voltage can be selected from the range 0.0 v to 0.7 v in 100 mv step. ? overcurrent 1 detection voltage 0.05 v to 0.3 v (applicable in 10 mv step) accuracy: 15 mv ? overcurrent 2 detection voltage 0.5 v (fixed) accuracy: 100 mv (2) high voltage device is used for charger connection pins (vm and co pins: absolute maximum rating = 28 v) (3) delay times (overcharge: t cu , overdischarge: t dl , overcurrent 1: t lov1 , overcurrent 2: t lov2 ) are generated by an internal circuit. no external capacitor is necessary. accuracy: 20% (4) three-step overcurrent detection circuit is included. (overcurrent 1, overcurrent 2 and load short-circuiting) (5) 0 v battery charge function ?availabl e? / ?unavailable? are selectable. (6) charger detection function and abnorma l charge current detection function ? the overdischarge hysteresis is released by detecting negative voltage at the vm pin ( ? 0.7 v typ.). (charger detection function) ? when the output voltage of the do pin is high and t he voltage at the vm pin is equal to or lower than the charger detection voltage ( ? 0.7 v typ.), the output voltage of the co pin goes low. (abnormal charge current detection function) (7) low current consumption ? operation mode 3.5 a typ., 7.0 a max. ? power-down mode 0.1 a max. (8) wide operating temperature range ? 40 c to + 85 c (9) small package sot-23-6, 6-pin snb(b) *1. overcharge release voltage = overcharge detection voltage ? overcharge hysteresis voltage (where overcharge release voltage < 3.8 v is prohibited.) *2. overdischarge release voltage = overdischarge detection voltage + overdischarge hysteresis voltage (where overdischarge release voltage > 3.4 v is prohibited.) ? applications ? lithium-ion rechargeable battery packs ? lithium polymer rechargeable battery packs
battery protection ic for single-cell pack s-8261 series rev.1.9 _00 seiko instruments inc. 2 ? packages package name drawing code package tape reel sot-23-6 mp006-a mp006-a mp006-a 6-pin snb(b) bd 006-a bd006-a bd006-a battery protection ic for single-cell pack rev.1.9 _00 s-8261 series seiko instruments inc. 3 ? block diagrams 1. product with 0 v battery charge function + ? ? + vm vss vdd dp co do overcharge detection comparator overcurrent 2 detection comparator ? + ? + output control circuit 0 v battery charge circuit overdischarge detection comparator load short-circuiting detection comparator divider control logic oscillator control circuit r vmd r vms charger detection circuit overcurrent 1 detection comparator ? + remark all the diodes shown in t he figure are parasitic diodes. figure 1 2. product with 0 v battery charge inhibition function + ? ? + vm vss vdd dp co do overcharge detection comparator overcurrent 2 detection comparator ? + ? + output control circuit 0 v battery charge inhibition circuit overdischarge detection comparator load short-circuiting detection comparator divider control logic oscillator control circuit r vmd r vms charger detection circuit overcurrent 1 detection comparator ? + remark all the diodes shown in t he figure are parasitic diodes. figure 2 battery protection ic for single-cell pack s-8261 series rev.1.9 _00 seiko instruments inc. 4 ? product name structure 1. product name s ? 8261a xx xx ? xxx ? xx ic direction in tape specifications *1 t2: sot-23-6 tf: 6-pin snb(b) product name (abbreviation) *2 package name (abbreviation) md: sot-23-6 bd: 6-pin snb(b) serial code assigned from aa to zz in alphabetical order *1. refer to the taping specifications. *2. refer to the product name list. battery protection ic for single-cell pack rev.1.9 _00 s-8261 series seiko instruments inc. 5 2. product name list table 1 (1 / 2) model no. overcharge detection voltage [v cu ] overcharge hysteresis voltage [v hc ] overdischarge detection voltage [v dl ] overdischarg e hysteresis voltage [v hd ] overcurrent 1 detection voltage [v iov1 ] 0 v battery charge function s-8261aagmd-g2g-t2 4.28 v 0.2 v 2.3 v 0 v 0.16 v available s-8261aahmd-g2h-t2 4.28 v 0.2 v 2.3 v 0 v 0.08 v available s-8261aajbd-g2j-tf 4.325 v 0.25 v 2.5 v 0.4 v 0.15 v unavailable s-8261aajmd-g2j-t2 4.325 v 0.25 v 2.5 v 0.4 v 0.15 v unavailable s-8261aalmd-g2l-t2 4.30 v 0.1 v 2.3 v 0 v 0.08 v unavailable s-8261aammd-g2m-t2 4.30 v 0.1 v 2.3 v 0 v 0.2 v unavailable s-8261aanmd-g2n-t2 4.275 v 0.1 v 2.3 v 0.1 v 0.1 v available s-8261aaomd-g2o-t2 4.28 v 0.2 v 2.3 v 0 v 0.13 v unavailable s-8261aapmd-g2p-t2 4.325 v 0.25 v 2.5 v 0.4 v 0.1 v unavailable s-8261aarbd-g2r-tf 4.28 v 0.2 v 2.3 v 0 v 0.1 v available S-8261AARMD-G2R-T2 4.28 v 0.2 v 2.3 v 0 v 0.1 v available s-8261aasmd-g2s-t2 4.28 v 0.2 v 2.3 v 0 v 0.15 v unavailable s-8261aaumd-g2u-t2 4.275 v 0.1 v 2.3 v 0.1 v 0.1 v available s-8261aavbd-g2v-tf 4.3 v 0.2 v 2.3 v 0 v 0.13 v available s-8261aaxmd-g2x-t2 4.35 v 0.1 v 2.3 v 0.1 v 0.1 v available s-8261aazmd-g2z-t2 4.28 v 0.25 v 2.5 v 0.4 v 0.1 v unavailable s-8261abamd-g3a-t2 4.35 v 0.2 v 2.5 v 0 v 0.2 v available s-8261abbmd-g3b-t2 4.275 v 0.2 v 2.3 v 0 v 0.13 v available s-8261abcmd-g3c-t2 4.30 v 0.2 v 2.3 v 0 v 0.13 v available s-8261abdbd-g3d-tf 4.28 v 0.2 v 2.3 v 0 v 0.13 v available s-8261abebd-g3e-tf 4.275 v 0.2 v 2.3 v 0 v 0.1 v available s-8261abgbd-g3g-tf 4.275 v 0.2 v 2.3 v 0 v 0.1 v unavailable s-8261abhbd-g3h-tf 4.20 v 0 v 2.3 v 0 v 0.1 v available s-8261abibd-g3i-tf 4.275 v 0.2 v 2.3 v 0 v 0.2 v unavailable s-8261abjmd-g3j-t2 4.28 v 0.2 v 3.0 v 0 v 0.08 v available s-8261abkmd-g3k-t2 4.10 v 0.25 v 2.5 v 0.4 v 0.15 v unavailable s-8261ablbd-g3l-tf 4.275 v 0.2 v 2.3 v 0 v 0.05 v unavailable s-8261abmmd-g3m-t2 4.28 v 0.2 v 2.8 v 0 v 0.1 v available s-8261abnmd-g3n-t2 4.30 v 0.2 v 2.3 v 0 v 0.06 v available s-8261abobd-g3o-tf 4.28 v 0.2 v 2.3 v 0 v 0.04 v available s-8261abpmd-g3p-t2 4.20 v 0.1 v 2.8 v 0.1 v 0.15 v unavailable s-8261abrmd-g3r-t2 4.275 v 0.2 v 2.5 v 0.4 v 0.15 v unavailable s-8261absmd-g3s-t2 4.28 v 0.1 v 2.5 v 0.5 v 0.18 v unavailable battery protection ic for single-cell pack s-8261 series rev.1.9 _00 seiko instruments inc. 6 table 1 (2 / 2) model no. overcharge detection delay time overdischarge detection delay time overcurrent 1 detection delay time s-8261aagmd-g2g-t2 1.2 s 144 ms 9 ms s-8261aahmd-g2h-t2 1.2 s 144 ms 9 ms s-8261aajbd-g2j-tf 1.2 s 144 ms 9 ms s-8261aajmd-g2j-t2 1.2 s 144 ms 9 ms s-8261aalmd-g2l-t2 1.2 s 144 ms 9 ms s-8261aammd-g2m-t2 1.2 s 144 ms 9 ms s-8261aanmd-g2n-t2 1.2 s 144 ms 9 ms s-8261aaomd-g2o-t2 1.2 s 144 ms 9 ms s-8261aapmd-g2p-t2 1.2 s 144 ms 9 ms s-8261aarbd-g2r-tf 1.2 s 144 ms 9 ms S-8261AARMD-G2R-T2 1.2 s 144 ms 9 ms s-8261aasmd-g2s-t2 1.2 s 144 ms 4.5 ms s-8261aaumd-g2u-t2 4.6 s 144 ms 9 ms s-8261aavbd-g2v-tf 4.6 s 144 ms 9 ms s-8261aaxmd-g2x-t2 4.6 s 144 ms 9 ms s-8261aazmd-g2z-t2 1.2 s 144 ms 9 ms s-8261abamd-g3a-t2 4.6 s 144 ms 9 ms s-8261abbmd-g3b-t2 1.2 s 144 ms 9 ms s-8261abcmd-g3c-t2 1.2 s 144 ms 9 ms s-8261abdbd-g3d-tf 1.84 s 115 ms 7.2 ms s-8261abebd-g3e-tf 1.2 s 144 ms 9 ms s-8261abgbd-g3g-tf 1.2 s 36 ms 9 ms s-8261abhbd-g3h-tf 0.3 s 36 ms 18 ms s-8261abibd-g3i-tf 1.2 s 36 ms 9 ms s-8261abjmd-g3j-t2 1.2 s 144 ms 9 ms s-8261abkmd-g3k-t2 1.2 s 144 ms 9 ms s-8261ablbd-g3l-tf 1.2 s 36 ms 9 ms s-8261abmmd-g3m-t2 1.2 s 144 ms 9 ms s-8261abnmd-g3n-t2 1.2 s 144 ms 9 ms s-8261abobd-g3o-tf 1.2 s 144 ms 9 ms s-8261abpmd-g3p-t2 1.2 s 144 ms 9 ms s-8261abrmd-g3r-t2 1.2 s 144 ms 9 ms s-8261absmd-g3s-t2 1.2 s 144 ms 9 ms remark it is possible to change the detection voltages of the product other than above. the delay times can also be changed within the range listed bellow. for details, please contact sii marketing department. delay time symbol selection range remarks overcharge detection delay time t cu 0.15 s 1.2 s 4.6 s choose from the left. overdischarge detection delay time t dl 36 ms 144 ms 290 ms choose from the left. overcurrent 1 detection delay time t lov1 4.5 ms 9 ms 18 ms choose from the left. remark the values surrounded by bold lines are the delay time of the standard products. battery protection ic for single-cell pack rev.1.9 _00 s-8261 series seiko instruments inc. 7 ? pin configurations table 2 pin no. symbol pin description 1 do fet gate control pin for discharge (cmos output) 2 vm voltage detection pin between vm and vss (overcurrent detection pin) 3 co fet gate control pin for charge (cmos output) 4 dp test pin for delay time measurement 5 vdd positive power input pin 6 vss negative power input pin sot-23-6 top view 6 4 5 1 2 3 figure 3 table 3 pin no. symbol pin description 1 co fet gate control pin for charge (cmos output) 2 vm voltage detection pin between vm and vss (overcurrent detection pin) 3 do fet gate control pin for discharge (cmos output) 4 vss negative power input pin 5 dp test pin for delay time measurement 6 vdd positive power input pin 6-pin snb(b) top view 6 5 4 1 2 3 4 5 6 3 2 1 bottom view *1 *1. connect the heatsink of back side at shadowed area to the board, and set electric potential open or vdd. however, do not use it as the function of electrode. figure 4 battery protection ic for single-cell pack s-8261 series rev.1.9 _00 seiko instruments inc. 8 ? absolute maximum ratings table 4 (ta = 25 c unless otherwise specified) parameter symbol applied pin rating unit input voltage between vdd and vss *1 v ds vdd v ss ? 0.3 to v ss + 12 v input pin voltage for vm v vm vm v dd ? 28 to v dd + 0.3 v output pin voltage for co v co co v vm ? 0.3 to v dd + 0.3 v output pin voltage for do v do do v ss ? 0.3 to v dd + 0.3 v power dissipation sot-23-6 p d ? 250 mw 6-pin snb(b) p d ? 90 mw operating temperature range t opr ? ? 40 to + 85 c storage temperature range t stg ? ? 55 to + 125 c caution the absolute maximum ratings are rated values exceeding which the product could suffer physical damage. these values must therefore not be exceeded under any conditions. *1. even pulse ( s) noise exceeding the above input voltage (v ss + 12 v) may damage the ic, so do not allow such noise to be applied. battery protection ic for single-cell pack rev.1.9 _00 s-8261 series seiko instruments inc. 9 ? electrical characteristics 1. except detection delay time (25 c) table 5 (ta = 25 c unless otherwise specified) parameter symbol test condition remark min. typ. max. unit test circuit [detection voltage] overcharge detection voltage v cu = 3.9 v to 4.4 v, 5 mv step v cu 1 ? v cu ? 0.025 v cu v cu + 0.025 v 1 ta = ? 5 c to 55 c *1 v cu ? 0.030 v cu v cu + 0.030 overcharge hysteresis voltage v hc = 0.0 v to 0.4 v, 50 mv step v hc 1 ? v hc ? 0.025 v hc v hc + 0.025 v 1 overdischarge detection voltage v dl = 2.0 v to 3.0 v, 10 mv step v dl 2 ? v dl ? 0.050 v dl v dl + 0.050 v 2 overdischarge hysteresis voltage v hd = 0.0 v to 0.7 v, 100 mv step v hd 2 ? v hd ? 0.050 v hd v hd + 0.050 v 2 overcurrent 1 detection voltage v iov1 = 0.05 v to 0.3 v, 10 mv step v iov1 3 ? v iov1 ? 0.015 v iov1 v iov1 + 0.015 v 2 overcurrent 2 detection voltage v iov2 3 ? 0.4 0.5 0.6 v 2 load short-circuiting detection voltage v short 3 ? 0.9 1.2 1.5 v 2 charger detection voltage v cha 4 ? ? 1.0 ? 0.7 ? 0.4 v 2 [input voltage, operation voltage] operation voltage between vdd and vss v dsop1 ? internal circuit operating voltage 1.5 ? 8 v ? operation voltage between vdd and vm v dsop2 ? internal circuit operating voltage 1.5 ? 28 v ? [current consumption] current consumption in normal operation i ope 5 v dd = 3.5 v, v vm = 0 v 1.0 3.5 7.0 a 2 current consumption at power down i pdn 5 v dd = v vm = 1.5 v ? ? 0.1 a 2 [output resistance] co pin resistance ?h? r coh 7 v co = 3.0 v, v dd = 3.5 v, v vm = 0 v 2.5 5 10 k ? 4 co pin resistance ?l? r col 7 v co = 0.5 v, v dd = 4.5 v, v vm = 0 v 2.5 5 10 k ? 4 do pin resistance ?h? r doh 8 v do = 3.0 v, v dd = 3.5 v, v vm = 0 v 2.5 5 10 k ? 4 do pin resistance ?l? r dol 8 v do = 0.5 v, v dd = v vm = 1.8 v 2.5 5 10 k ? 4 [vm internal resistance] internal resistance between vm and vdd r vmd 6 v dd = 1.8 v, v vm = 0 v 100 300 900 k ? 3 internal resistance between vm and vss r vms 6 v dd = 3.5 v, v vm = 1.0 v 10 20 40 k ? 3 [0 v battery charging function] 0 v battery charge starting charger voltage v 0cha 11 0 v battery charging available 1.2 ? ? v 2 0 v battery charge inhibition battery voltage v 0inh 12 0 v battery charging unavailable ? ? 0.5 v 2 *1. since products are not screened at high and low temperat ures, the specification fo r this temperature range is guaranteed by design, not tested in production. battery protection ic for single-cell pack s-8261 series rev.1.9 _00 seiko instruments inc. 10 2. except detection delay time ( ? 40 to + 85 c *1 ) table 6 (ta = ? 40 to + 85 c *1 unless otherwise specified) parameter symbol test condition remark min. typ. max. unit test circuit [detection voltage] overcharge detection voltage v cu = 3.9 v to 4.4 v, 5 mv step v cu 1 ? v cu ? 0.055 v cu v cu + 0.040 v 1 overcharge hysteresis voltage v hc = 0.0 v to 0.4 v, 50 mv step v hc 1 ? v hc ? 0.025 v hc v hc + 0.025 v 1 overdischarge detection voltage v dl = 2.0 v to 3.0 v, 10 mv step v dl 2 ? v dl ? 0.080 v dl v dl + 0.080 v 2 overdischarge hysteresis voltage v hd = 0.0 v to 0.7 v, 100 mv step v hd 2 ? v hd ? 0.050 v hd v hd + 0.050 v 2 overcurrent 1 detection voltage v iov1 = 0.05 v to 0.3 v, 10 mv step v iov1 3 ? v iov1 ? 0.021 v iov1 v iov1 + 0.021 v 2 overcurrent 2 detection voltage v iov2 3 ? 0.37 0.5 0.63 v 2 load short-circuiting detection voltage v short 3 ? 0.7 1.2 1.7 v 2 charger detection voltage v cha 4 ? ? 1.2 ? 0.7 ? 0.2 v 2 [input voltage, operation voltage] operation voltage between vdd and vss v dsop1 ? internal circuit operating voltage 1.5 ? 8 v ? operation voltage between vdd and vm v dsop2 ? internal circuit operating voltage 1.5 ? 28 v ? [current consumption] current consumption in normal operation i ope 5 v dd = 3.5 v, v vm = 0 v 0.7 3.5 8.0 a 2 current consumption at power down i pdn 5 v dd = v vm = 1.5 v ? ? 0.1 a 2 [output resistance] co pin resistance ?h? r coh 7 v co = 3.0 v, v dd = 3.5 v, v vm = 0 v 1.2 5 15 k ? 4 co pin resistance ?l? r col 7 v co = 0.5 v, v dd = 4.5 v, v vm = 0 v 1.2 5 15 k ? 4 do pin resistance ?h? r doh 8 v do = 3.0 v, v dd = 3.5 v, v vm = 0 v 1.2 5 15 k ? 4 do pin resistance ?l? r dol 8 v do = 0.5 v, v dd = v vm = 1.8 v 1.2 5 15 k ? 4 [vm internal resistance] internal resistance between vm and vdd r vmd 6 v dd = 1.8 v, v vm = 0 v 78 300 1310 k ? 3 internal resistance between vm and vss r vms 6 v dd = 3.5 v, v vm = 1.0 v 7.2 20 44 k ? 3 [0 v battery charging function] 0 v battery charge starting charger voltage v 0cha 11 0 v battery charging available 1.7 ? ? v 2 0 v battery charge inhibition battery voltage v 0inh 12 0 v battery charging unavailable ? ? 0.3 v 2 *1. since products are not screened at high and low temperat ures, the specification fo r this temperature range is guaranteed by design, not tested in production. battery protection ic for single-cell pack rev.1.9 _00 s-8261 series seiko instruments inc. 11 3. detection delay time table 7 s-8261aag, s-8261aah, s-8261aaj , s-8261aal, s-8261aam, s-8261 aan, s-8261aao, s-8261aap, s-8261aar, s-8261aaz, s-8261abb, s-8261abc, s-8261abe, s-8261 abj, s-8261abk, s-8261abm, s-8261abn, s-8261abo, s-8261 abp, s-8261abr, s-8261abs parameter symbol test condition remark min. typ. max. unit test circuit [delay time] 25 c overcharge detection delay time t cu 9 ? 0.96 1.2 1.4 s 5 overdischarge detection delay time t dl 9 ? 115 144 173 ms 5 overcurrent 1 detection delay time t lov1 10 ? 7.2 9 11 ms 5 overcurrent 2 detection delay time t lov2 10 ? 1.8 2.24 2.7 ms 5 load short-circuiting detection delay time t short 10 ? 220 320 380 s 5 [delay time] ? 40 c to + 85 c *1 overcharge detection delay time t cu 9 ? 0.7 1.2 2.0 s 5 overdischarge detection delay time t dl 9 ? 80 144 245 ms 5 overcurrent 1 detection delay time t lov1 10 ? 5 9 15 ms 5 overcurrent 2 detection delay time t lov2 10 ? 1.2 2.24 3.8 ms 5 load short-circuiting detection delay time t short 10 ? 150 320 540 s 5 *1. since products are not screened at high and low temperat ures, the specification fo r this temperature range is guaranteed by design, not tested in production. table 8 s-8261aas parameter symbol test condition remark min. typ. max. unit test circuit [delay time] 25 c overcharge detection delay time t cu 9 ? 0.96 1.2 1.4 s 5 overdischarge detection delay time t dl 9 ? 115 144 173 ms 5 overcurrent 1 detection delay time t lov1 10 ? 3.6 4.5 5.4 ms 5 overcurrent 2 detection delay time t lov2 10 ? 1.8 2.24 2.7 ms 5 load short-circuiting detection delay time t short 10 ? 220 320 380 s 5 [delay time] ? 40 c to + 85 c *1 overcharge detection delay time t cu 9 ? 0.7 1.2 2.0 s 5 overdischarge detection delay time t dl 9 ? 80 144 245 ms 5 overcurrent 1 detection delay time t lov1 10 ? 2.5 4.5 7.7 ms 5 overcurrent 2 detection delay time t lov2 10 ? 1.2 2.24 3.8 ms 5 load short-circuiting detection delay time t short 10 ? 150 320 540 s 5 *1. since products are not screened at high and low temperat ures, the specification fo r this temperature range is guaranteed by design, not tested in production. battery protection ic for single-cell pack s-8261 series rev.1.9 _00 seiko instruments inc. 12 table 9 s-8261aau, s-8261aax, s-8261aba parameter symbol test condition remark min. typ. max. unit test circuit [delay time] 25 c overcharge detection delay time t cu 9 ? 3.7 4.6 5.5 s 5 overdischarge detection delay time t dl 9 ? 115 144 173 ms 5 overcurrent 1 detection delay time t lov1 10 ? 7.2 9 11 ms 5 overcurrent 2 detection delay time t lov2 10 ? 1.8 2.24 2.7 ms 5 load short-circuiting detection delay time t short 10 ? 220 320 380 s 5 [delay time] ? 40 c to + 85 c *1 overcharge detection delay time t cu 9 ? 2.5 4.6 7.8 s 5 overdischarge detection delay time t dl 9 ? 80 144 245 ms 5 overcurrent 1 detection delay time t lov1 10 ? 5 9 15 ms 5 overcurrent 2 detection delay time t lov2 10 ? 1.2 2.24 3.8 ms 5 load short-circuiting detection delay time t short 10 ? 150 320 540 s 5 *1. since products are not screened at high and low temperat ures, the specification fo r this temperature range is guaranteed by design, not tested in production. table 10 s-8261aav parameter symbol test condition remark min. typ. max. unit test circuit [delay time] 25 c overcharge detection delay time t cu 9 ? 3.7 4.6 5.5 s 5 overdischarge detection delay time t dl 9 ? 115 144 173 ms 5 overcurrent 1 detection delay time t lov1 10 ? 7.2 9 11 ms 5 overcurrent 2 detection delay time t lov2 10 ? 3.6 4.5 5.4 ms 5 load short-circuiting detection delay time t short 10 ? 450 600 720 s 5 [delay time] ? 40 c to + 85 c *1 overcharge detection delay time t cu 9 ? 2.5 4.6 7.8 s 5 overdischarge detection delay time t dl 9 ? 80 144 245 ms 5 overcurrent 1 detection delay time t lov1 10 ? 5 9 15 ms 5 overcurrent 2 detection delay time t lov2 10 ? 2.5 4.5 7.7 ms 5 load short-circuiting detection delay time t short 10 ? 310 600 1020 s 5 *1. since products are not screened at high and low temperat ures, the specification fo r this temperature range is guaranteed by design, not tested in production. battery protection ic for single-cell pack rev.1.9 _00 s-8261 series seiko instruments inc. 13 table 11 s-8261abd parameter symbol test condition remark min. typ. max. unit test circuit [delay time] 25c overcharge detection delay time t cu 9 ? 1.48 1.84 2.2 s 5 overdischarge detection delay time t dl 9 ? 92 115 138 ms 5 overcurrent 1 detection delay time t lov1 10 ? 5.76 7.2 8.8 ms 5 overcurrent 2 detection delay time t lov2 10 ? 2.88 3.6 4.32 ms 5 load short-circuiting detection delay time t short 10 ? 358 488 586 s 5 [delay time] ? 40c to + 85c *1 overcharge detection delay time t cu 9 ? 1.11 1.84 2.89 s 5 overdischarge detection delay time t dl 9 ? 68.9 115 182.3 ms 5 overcurrent 1 detection delay time t lov1 10 ? 4.31 7.2 11.59 ms 5 overcurrent 2 detection delay time t lov2 10 ? 2.16 3.6 5.68 ms 5 load short-circuiting detection delay time t short 10 ? 268 488 770 s 5 *1. since products are not screened at high and low temperat ures, the specification fo r this temperature range is guaranteed by design, not tested in production. table 12 s-8261abg, s-8261abi, s-8261abl parameter symbol test condition remark min. typ. max. unit test circuit [delay time] 25c overcharge detection delay time t cu 9 ? 0.96 1.2 1.4 s 5 overdischarge detection delay time t dl 9 ? 29 36 43 ms 5 overcurrent 1 detection delay time t lov1 10 ? 7.2 9 11 ms 5 overcurrent 2 detection delay time t lov2 10 ? 1.8 2.24 2.7 ms 5 load short-circuiting detection delay time t short 10 ? 220 320 380 s 5 [delay time] ? 40c to + 85c *1 overcharge detection delay time t cu 9 ? 0.7 1.2 2.0 s 5 overdischarge detection delay time t dl 9 ? 20 36 61 ms 5 overcurrent 1 detection delay time t lov1 10 ? 5 9 15 ms 5 overcurrent 2 detection delay time t lov2 10 ? 1.2 2.24 3.8 ms 5 load short-circuiting detection delay time t short 10 ? 150 320 540 s 5 *1. since products are not screened at high and low temperat ures, the specification fo r this temperature range is guaranteed by design, not tested in production. battery protection ic for single-cell pack s-8261 series rev.1.9 _00 seiko instruments inc. 14 table 13 s-8261abh parameter symbol test condition remark min. typ. max. unit test circuit [delay time] 25c overcharge detection delay time t cu 9 ? 0.24 0.3 0.36 s 5 overdischarge detection delay time t dl 9 ? 29 36 43 ms 5 overcurrent 1 detection delay time t lov1 10 ? 14 18 22 ms 5 overcurrent 2 detection delay time t lov2 10 ? 1.8 2.24 2.7 ms 5 load short-circuiting detection delay time t short 10 ? 220 320 380 s 5 [delay time] ? 40c to + 85c *1 overcharge detection delay time t cu 9 ? 0.17 0.3 0.51 s 5 overdischarge detection delay time t dl 9 ? 20 36 61 ms 5 overcurrent 1 detection delay time t lov1 10 ? 10 18 31 ms 5 overcurrent 2 detection delay time t lov2 10 ? 1.2 2.24 3.8 ms 5 load short-circuiting detection delay time t short 10 ? 150 320 540 s 5 *1. since products are not screened at high and low temperat ures, the specification fo r this temperature range is guaranteed by design, not tested in production. battery protection ic for single-cell pack rev.1.9 _00 s-8261 series seiko instruments inc. 15 ? test circuits remark unless otherwise specified, the output voltage levels ?h? and ?l? at co pin (v co ) and do pin (v do ) are judged by the threshold voltage (1.0 v) of the n-channel fet. judge the co pin level with respect to v vm and the do pin level with respect to v ss . (1) test condition 1, test circuit 1 ?? overcharge detection voltage, overcharge hysteresis voltage ?? the overcharge detection voltage (v cu ) is defined by the voltage between vdd and vss at which v co goes from ?h? to ?l? when the voltage v1 is gradually increased from the starting condition of v1 = 3.5 v. the overcharge hysteresis voltage (v hc ) is then defined as the differenc e between the overcharge detection voltage (v cu ) and the voltage between vdd and vss at which v co goes from ?h? to ?l? when the voltage v1 is gradually decreased. (2) test condition 2, test circuit 2 ?? overdischarge detection voltage, overdischarge hysteresis voltage ?? the overdischarge detection voltage (v dl ) is defined as the voltage between vdd and vss at which v do goes from ?h? to ?l? when the voltage v1 is gradua lly decreased from the starting condition of v1 = 3.5 v and v2 = 0 v. the overdischarge hysteresis voltage (v hd ) is then defined as the difference between the overdischarge detection voltage (v dl ) and the voltage between vdd and vss at which v do goes from ?h? to ?l? when the voltage v1 is gradually increased. (3) test condition 3, test circuit 2 ?? overcurrent 1 detection voltage, overcurrent 2 detection voltage, load short-circuiting detection voltage ?? the overcurrent 1 detection voltage (v iov1 ) is defined as the voltage between vm and vss whose delay time for changing v do from ?h? to ?l? lies between the minimum and the maximum value of the overcurrent 1 detection delay time when the voltage v2 is increased rapidly (within 10 s) from the starting condition v1 = 3.5 v and v2 = 0 v. the overcurrent 2 detection voltage (v iov2 ) is defined as the voltage between vm and vss whose delay time for changing v do from ?h? to ?l? lies between the minimum and the maximum value of the overcurrent 2 detection delay time when the voltage v2 is increased rapidly (within 10 s) from the starting condition v1 = 3.5 v and v2 = 0 v. the load short-circuiting detection voltage (v short ) is defined as the voltage between vm and vss whose delay time for changing v do from ?h? to ?l? lies between the minimum and the maximum value of the load short-circuiting detection delay time when t he voltage v2 is increased rapidly (within 10 s) from the starting condition v1 = 3.5 v and v2 = 0 v. (4) test condition 4, test circuit 2 ?? charger detection voltage, abnormal charge current detection voltage ?? the charger detection voltage (v cha ) is defined as the voltage between vm and vss at which v do goes from ?l? to ?h? when the voltage v3 is gradually decreased fr om 0 v after the voltage v1 is gradually increased from the starting condition of v1 = 1.8 v and v2 = 0 v until the voltage v1 becomes v1 = v dl + (v hd / 2). the charger detection voltage can be measured only in the product whose over discharge hysteresis v hd 0. set v1 = 3.5 v and v2 = 0 v. decrease v2 from 0 v gradually. the voltage between vm and vss when v co goes from ?h? to ?l? is the abnormal charge current detection voltage. the abnormal charge current detection voltage has the same value as the charger detection voltage (v cha ). (5) test condition 5, test circuit 2 ?? normal operation current consumpti on, power-down current consumption ?? the operating current consumption (i ope ) is the current that fl ows through the vdd pin (i dd ) under the set conditions of v1 = 3.5 v and v2 = 0 v (normal condition). the power-down current consumption (i pdn ) is the current that fl ows through the vdd pin (i dd ) under the set conditions of v1 = v2 = 1.5 v (overdischarge condition). battery protection ic for single-cell pack s-8261 series rev.1.9 _00 seiko instruments inc. 16 (6) test condition 6, test circuit 3 ?? internal resistance between vm and vdd, internal resistance between vm and vss ?? the resistance between vm and vdd (r vmd ) is the internal resistance between vm and vdd under the set conditions of v1 = 1.8 v and v2 = 0 v. the resistance between vm and vss (r vms ) is the internal resistance between vm and vdd under the set conditions of v1 = 3.5 v and v2 = 1.0 v. (7) test condition 7, test circuit 4 ?? co pin resistance ?h?, co pin resistance ?l? ?? the co pin resistance ?h? (r coh ) is the resistance t the co pin under the set condition of v1 = 3.5 v, v2 = 0 v and v3 = 3.0 v. the co pin resistance ?l? (r col ) is the resistance t the co pin under the set condition of v1 = 4.5 v, v2 = 0 v and v3 = 0.5 v. (8) test condition 8, test circuit 4 ?? do pin resistance ?h?, do pin resistance ?l? ?? the do pin resistance ?h? (r doh ) is the resistance t the do pin under the set condition of v1 = 3.5 v, v2 = 0 v and v4 = 3.0 v. the do pin resistance ?l? (r dol ) is the resistance t the do pin under the set condition of v1 = 1.8 v, v2 = 0 v and v4 = 0.5 v. (9) test condition 9, test circuit 5 ?? overcharge detection delay time, overdischarge detection delay time ?? the overcharge detection delay time (t cu ) is the time needed for v co to change from ?h? to ?l? just after the voltage v1 momentarily increases (within 10 s) from the overcharge detection voltage (v cu ) ? 0.2 v to the overcharge detection voltage (v cu ) + 0.2 v under the set condition of v2 = 0 v. the overdischarge detection delay time (t dl ) is the time needed for v do to change from ?h? to ?l? just after the voltage v1 momentarily decreases (within 10 s) from the overdischarge detection voltage (v dl ) + 0.2 v to the overdischarge detection voltage (v dl ) ? 0.2 v under the set condition of v2 = 0 v. (10) test condition 10, test circuit 5 ?? overcurrent 1 detection delay time, overcurrent 2 detection delay time, load short-circuiting detection delay time, abnormal char ge current detection delay time ?? the overcurrent 1 detection delay time (t iov1 ) is the time needed for v do to go ?l? after the voltage v2 momentarily increases (within 10 s) from 0 v to 0.35 v under the set condition of v1 = 3.5 v and v2 = 0 v. the overcurrent 2 detection delay time (t iov2 ) is the time needed for v do to go ?l? after the voltage v2 momentarily increases (within 10 s) from 0 v to 0.7 v under the set condition of v1 = 3.5 v and v2 = 0 v. the load short-circuiting detection delay time (t short ) is the time needed for v do to go ?l? after the voltage v2 momentarily increases (within 10 s) from 0 v to 1.6 v under the set condition of v1 = 3.5 v and v2 = 0 v. the abnormal charge current detection del ay time is the time needed for v co to go from ?h? to ?l? after the voltage v2 momentarily decreases (within 10 s) from 0 v to ? 1.1 v under the set condition of v1 = 3.5 v and v2 = 0 v. the abnormal charge current detection delay time has the same value as the overcharge detection delay time. (11) test condition 11, test circuit 2 (product with 0 v battery charge function) ?? 0 v battery charge starting charger voltage ?? the 0 v battery charge starting charger voltage (v 0cha ) is defined as the voltage between vdd and vm at which v co goes ?h? (v vm + 0.1 v or higher) when the voltage v2 is gradually decreased from the starting condition of v1 = v2 = 0 v. battery protection ic for single-cell pack rev.1.9 _00 s-8261 series seiko instruments inc. 17 (12) test condition 12, test circuit 2 (produc t with 0 v battery charge inhibition function) ?? 0 v battery charge inhibition battery voltage ?? the 0 v battery charge inhibition battery voltage (v 0inh ) is defined as the voltage between vdd and vss at which v co goes ?h? (v vm + 0.1 v or higher) when the voltage v1 is gradually increased from the starting condition of v1 = 0 v and v2 = ? 4 v. vss do co vdd s-8261 series r1 = 470 ? v1 dp vm test circuit 1 v do com v co v v a com v2 v v v co vm do co dp vss v1 v do vdd i dd s-8261 series test circuit 2 a com v2 vm co do dp vss v1 vdd i dd s-8261 series i vm a test circuit 3 a a v4 v3 v2 i co dp vm do co com vss v1 vdd i do s-8261 series test circuit 4 v2 com vm co do dp vss v1 vdd oscilloscope s-8261 series oscilloscope test circuit 5 figure 5 battery protection ic for single-cell pack s-8261 series rev.1.9 _00 seiko instruments inc. 18 ? operation remark refer to the ? battery protection ic connection example ?. 1. normal condition the s-8261 series monitors the voltage of the battery connected between vdd pin and vss pin and the voltage difference between vm pin and vss pin to cont rol charging and discharging. when the battery voltage is in the range from the overdischarge detection voltage (v dl ) to the overcharge detection voltage (v cu ), and the vm pin voltage is in the r ange from the charger detection voltage (v cha ) to the overcurrent 1 detection voltage (v iov1 ), the ic turns both the charging and discharging control fets on. this condition is called the normal condition, and in this condition charging and discharging can be carried out freely. remark when a battery is connected to the ic for t he first time, discharging may not be enabled. in this case, short the vm pin and vss pin or connect the charger to restore the normal condition. 2. overcurrent condition (detection of overcurrent 1, overcurrent 2 and load short-circuiting) when a battery in the normal status is in the status where the voltage of the vm pin is equal to or higher than the overcurrent detection volt age because the discharge current is higher than the specified value and the status lasts for the overcu rrent detection delay time, the discharge control fet is turned off and discharging is stopped. this status is called the overcurrent status. in the overcurrent status, the vm and vss pins are shorted by the resistor between vm and vss (r vms ) in the ic. however, the voltage of the vm pin is at the v dd potential due to the load as long as the load is connected. when the load is disconnec ted, the vm pin returns to the v ss potential. this ic detects the status when the impedance between the eb + pin and eb ? pin (refer to figure 11 ) increases and is equal to the impedance that enables aut omatic restoration and t he voltage at the vm pin returns to overcurrent detection voltage 1 (v iov1 ) or lower and the overcurrent status is restored to the normal status. remark the impedance that enables automatic restor ation varies depending on the battery voltage and the set value of overcurrent 1 detection voltage. 3. overcharge condition when the battery voltage becomes higher than the overcharge detection voltage (v cu ) during charging under the normal condition and the detection continues for the overcharge detection delay time (t cu ) or longer, the s-8261 series turns the charging control fe t off to stop charging. this condition is called the overcharge condition. the overcharge condition is released by the following two cases ((1) and (2)): (1) when the battery voltage falls below the overcharge release voltage (v cu ) ? overcharge detection hysteresis voltage (v hc ), the s-8261 series turns the charging control fet on and turns to the normal condition. (2) when a load is connected and discharging starts, the s-8261 series turns the charging control fet on and returns to the normal condition. just afte r the load is connected and discharging starts, the discharging current flows through the parasitic diode in the charging control fet. at this moment the vm pin potential becomes v f , the voltage for the parasitic diode, higher than v ss level. when the battery voltage goes under the overcharge detection voltage (v cu ) and provided that the vm pin voltage is higher than the overcurrent 1 detection vo ltage, the s-8261 series releases the overcharge condition. remark 1. if the battery is charged to a voltage higher than the overcharge detection voltage (v cu ) and the battery voltage does not fall below the overcharge detection voltage (v cu ) even when a heavy load is connected, the detection of ov ercurrent 1, overcurrent 2 and load short- circuiting do not function until the battery vo ltage falls below over charge detection voltage (v cu ). since an actual battery has an internal impedance of several dozens of m ? , the battery voltage drops immediately after a heavy load that causes over current is connected, and the detection of overcurrent 1, overcurrent 2 and load short-circuiting function. 2. when a charger is connected after the over charge detection, the overcharge condition is not released even if the battery voltage is below the overcharge release voltage (v cl ). the overcharge condition is released when t he vm pin voltage goes over the charger detection voltage (v cha ) by removing the charger. battery protection ic for single-cell pack rev.1.9 _00 s-8261 series seiko instruments inc. 19 4. overdischarge condition when the battery voltage falls below the overdischarge detection voltage (v dl ) during discharging under the normal condition and the detection continues for the overdischarge detection delay time (t dl ) or longer, the s-8261 series turns the discharging control fet off to stop discharging. this condition is called the overdischarge condition. when the dischar ging control fet is turned off, the vm pin voltage is pulled up by the resistor between vm and vdd in the ic (r vmd ). when the voltage difference between the vm and vdd then is 1.3 v (typ.) or lower, t he current consumption is reduced to the power-down current consumption (i pdn ). this condition is called the power-down condition. the power-down condition is released when a char ger is connected and the voltage difference between the vm and vdd becomes 1.3 v (typ.) or higher. moreover when the battery voltage becomes the overdischarge detection voltage (v dl ) or higher, the s-8261 series turns the discharging fet on and returns to the normal condition. 5. charger detection when a battery in the overdischarge condition is c onnected to a charger and provided that the vm pin voltage is lower than the charger detection voltage (v cha ), the s-8261 series releases the overdischarge condition and turns the discharging control fet on w hen the battery voltage becomes equal to or higher than the overdischarge detection voltage (v dl ) since the charger detection func tion works. this action is called charger detection. when a battery in the overdischarge condition is c onnected to a charger and provided that the vm pin voltage is not lower than the charger detection voltage (v cha ), the s-8261 series releases the overdischarge condition when the battery voltage reaches the overdischarge detection voltage (v dl ) + overdischarge hysteresis (v hd ) or higher. 6. abnormal charge current detection if the vm pin voltage falls below the charger detection voltage (v cha ) during charging under normal condition and it continues for the overcharge detection delay time (t cu ) or longer, the charging control fet turns off and charging stops. this action is called the abnormal charge current detection. abnormal charge current detection works when the do pin voltage is ?h? and the vm pin voltage falls below the charger detection voltage (v cha ). consequently, if an abnormal charge current flows to an over-discharged battery, the s-8261 series turns the charging control fet off and stops charging after the battery voltage becomes higher than the overdi scharge detection voltage which make the do pin voltage ?h?, and still after the ov ercharge detection delay time (t cu ) elapses. abnormal charge current detection is released w hen the voltage difference between vm pin and vss pin becomes less than charger detection voltage (v cha ). battery protection ic for single-cell pack s-8261 series rev.1.9 _00 seiko instruments inc. 20 7. delay circuits the detection delay times are determined by dividing a clock of the approximat ely 3.5 khz with the counter. remark 1. the detection delay time for overcurrent 2 (t iov2 ) and load short-circuiting (t short ) start when the overcurrent 1 (v iov1 ) is detected. when the overcurrent 2 (v iov2 ) or load short-circuiting (v short ) is detected over the detection del ay time for each of them (= t iov2 or t short ) after the detection of overcurrent 1 (v iov1 ), the s-8261 series turns the fet off within t iov2 or t short of each detection. do pin vm pin v dd v dd time v iov1 v ss v ss v iov2 overcurrent 2 detection delay time (t iov2 ) time t d 0 Q t d Q t iov2 figure 6 2. when the overcurrent is detected and continues for longer than the overdischarge detection delay time (t dl ) without releasing the load, the condi tion changes to the power-down condition when the battery voltage falls below the overdischarge detection voltage (v dl ). when the battery voltage falls below the overdischarge detection voltage (v dl ) due to the overcurrent, the s-8261 series turns the discharging control fet off by the overcurrent detection. in this case the recovery of the battery voltage is so slow that if the battery voltage after the overdischarge detection delay time (t dl ) is still lower than the over discharge detection voltage (v dl ), the s-8261 series shifts to the power-down condition. 8. dp pin the dp pin is a test pin for delay time measurement and it should be open in the actual application. if a capacitor whose capacitance is la rger than 1000 pf or a resister whose resistance is less than 1 m ? is connected to this pin, error may occur in the delay times or in the detection voltages. 9. 0 v battery charging function ?available? this function is used to recharge the connected battery whose voltage is 0 v due to the self-discharge. when the 0 v battery charge starting charger voltage (v 0cha ) or higher is applied between eb + pin and eb ? pin by connecting a charger, the charging control fet gate is fixed to vdd pin voltage. when the voltage between the gate and source of the charging control fet becomes equal to or higher than the turn-on voltage due to the charger voltage, the charging control fet is turned on to start charging. at this time, the discharging control fet is off and the charging current flows through the internal parasitic diode in the discharging control fet. when the ba ttery voltage becomes equal to or higher than the overdischarge release voltage (v du ), the s-8261 series enters the normal condition. caution some battery providers do not recommend charging for completely self-discharged battery. please ask battery providers before determine whether to enable or inhibit the 0 v battery charging function. remark the 0 v battery charge function has higher prio rity than the abnormal charge current detection function. consequently, a product with the 0 v battery charging function is enabled charges a battery forcibly and abnormal charge current cannot be detected when the battery voltage is low. battery protection ic for single-cell pack rev.1.9 _00 s-8261 series seiko instruments inc. 21 10. 0 v battery charging function ?unavailable? this function inhibits the recharging when a battery t hat is short-circuited (0 v battery) internally is connected. when the battery voltage is the 0 v battery charge inhibition battery voltage (v 0inh ) or lower, the charging control fet gate is fixed to eb ? pin voltage to inhibit charging. when the battery voltage is the 0 v battery charge inhibition battery voltage (v 0inh ) or higher, charging can be performed. caution some battery providers do not recommend charging for completely self-discharged battery. please ask battery providers before determining the 0 v battery charging function. battery protection ic for single-cell pack s-8261 series rev.1.9 _00 seiko instruments inc. 22 ? operation timing chart 1. overcharge and overdischarge detection v dl + v hd v dl v dd v ss (2) (1) (1) (1) (3) battery voltage do pin co pin vm pin charger connection load connection mode overdischarge detection delay time (t dl ) remark (1) normal condition, (2) overcharge condition, (3) overdischarge condition, (4) overcurrent condition the charger is supposed to charge with constant current. overcharge detection delay time (t cu ) v dd v dd v iov1 v ss v cha v ss v cu v cu ? v hc figure 7 2. overcurrent detection v cu v cu ? v hc v dl + v hd v dl v dd v ss v dd v ss (1) (4) (1) (4) (1) (4) (1) v dd v short v iov2 v iov1 v ss overcurrent 1 detection delay time (t iov1 ) overcurrent 2 detection delay time (t iov2 ) load short-circuiting detection delay time (t short ) battery voltage do pin co pin vm pin charger connection load connection mode remark (1) normal condition, (2) overcharge condition, (3) overdischarge condition, (4) overcurrent condition the charger is supposed to charge with constant current. figure 8 battery protection ic for single-cell pack rev.1.9 _00 s-8261 series seiko instruments inc. 23 3. charger detection v cu v cu ? v hc v dl + v hd v dl v dd v ss v dd v ss v dd v ss v cha overdischarge detection delay time (t dl ) in case vm pin voltage < v cha overdischarge is released at the overdischarge detection voltage (v dl ) (1) (3) (1) battery voltage do pin co pin vm pin charger connection load connection mode remark (1) normal condition, (2) overcharge condition, (3) overdischarge condition, (4) overcurrent condition the charger is supposed to charge with constant current. figure 9 4. abnormal charge current detection abnormal charging current detection delay time ( = overcharge detection delay time (t cu )) overdischarge detection delay time (t dl ) (3) (1) (2) (1) (1) battery voltage do pin co pin vm pin charger connection load connection mode remark (1) normal condition, (2) overcharge condition, (3) overdischarge condition, (4) overcurrent condition the charger is supposed to charge with constant current. v cu v cu ? v hc v dl + v hd v dl v dd v ss v dd v ss v dd v ss v cha figure 10 battery protection ic for single-cell pack s-8261 series rev.1.9 _00 seiko instruments inc. 24 ? battery protection ic connection example eb + eb ? s-8261 series 470 ? vss battery do vdd r2 2 k ? c1 co vm fet1 fet2 r1 0.1 f dp figure 11 table 14 constant for external components symbol part purpose typ. min. max. remarks fet1 n-channel mos fet discharge control ? ? ? threshold voltage overdischarge detection voltage *1 gate to source withstanding voltage charger voltage *2 fet2 n-channel mos fet charge control ? ? ? threshold voltage overdischarge detection voltage *1 gate to source withstanding voltage charger voltage *2 r1 resistor esd protection, for power fluctuation 470 ? 300 ? 1 k ? resistance should be as small as possible to avoid lowering of the overcharge detection accuracy caused by vdd pin current. *3 c1 capacitor for power fluctuation 0.1 f 0.022 f1.0 f install a capacitor of 0.022 f or higher between vdd and vss. *4 r2 resistor protection for reverse connection of a charge r 2 k ? 300 ? 4 k ? select as large a resistance as large as possible to prevent current when a c harger is connected in reverse. *5 *1. if the threshold voltage of an fet is low, the fet may not cut the charging current. if an fet with a threshold voltage equal to or higher than the overdischarge detection voltage is used, discharging may be stoped before overdischarge is detected. *2. if the withstanding voltage between the gate and source is lower than the charger voltage, the fet may be destroyed. *3. if r1 has a high resistance, the voltage bet ween vdd and vss may exceed the absolute maximum rating when a charger is connected in reverse since the cu rrent flows from the charger to the ic. insert a resistor of 300 ? or higher to r1 for esd protection. *4. if a capacitor of less than 0.022 f is connected to c1, do may osc illate when load short-circuiting is detected. be sure to connect a capacitor of 0.022 f or higher to c1. *5. if r2 has a resistance higher than 4 k ? , the charging current may not be cut when a high-voltage charger is connected. battery protection ic for single-cell pack rev.1.9 _00 s-8261 series seiko instruments inc. 25 caution1. the above constants may be changed without notice. 2. the dp pin should be open. 3. it has not been confirmed whether the operation is normal or not in circuits other than the above example of connection. in addition, th e example of connection shown above and the constant do not guarantee proper operation. perform through evaluation using the actual application to set the constant. ? precautions ? the application conditions for the input voltage, output voltage, and load curr ent should not exceed the package power dissipation. ? do not apply an electrostatic discharge to this ic that exceeds the performanc e ratings of the built-in electrostatic protection circuit. ? sii claims no responsibility for any and all disputes ar ising out of or in connection with any infringement by products including this ic of patents owned by a third party. battery protection ic for single-cell pack s-8261 series rev.1.9 _00 seiko instruments inc. 26 ? characteristics (typical data) 1. detection / release voltage temperature characteristics overcharge detection voltage vs. temperature overcharge release voltage vs. temperature 4.34 4.36 4.38 4.40 4.42 4.44 ? 25 0 25 50 75 ta [c] v cu [v] ? 50 100 3.92 3.94 3.96 3.98 4.00 4.02 ? 25 0 25 50 75 ta [ c ] v cl [v] ? 50 100 overdischarge detection voltage vs. temperature overdischarge release voltage vs. temperature 2.94 2.96 2.98 3.00 3.02 3.04 ? 25 0 25 50 75 ta [c] v dl [v] ? 50 100 3.34 3.36 3.38 3.40 3.42 3.44 ? 25 0 25 50 75 ta [c] v du [v] ? 50 100 overcurrent 1 detection voltage vs. temperature overcurrent 2 detection voltage vs. temperature 0.15 0.20 0.25 0.30 0.35 0.40 0.45 ? 25 0 25 50 75 ta [c] v iov1 [v] ? 50 100 0.40 0.45 0.50 0.55 0.60 0.65 ? 25 0 25 50 75 ta [c] v iov2 [v] ? 50 100 load short-circuiting detection voltage vs.temperature 1.0 1.1 1.2 1.3 1.4 1.5 ? 25 0 25 50 75 ta [c] v short [v] ? 50 100 battery protection ic for single-cell pack rev.1.9 _00 s-8261 series seiko instruments inc. 27 2. current consumption temperature characteristics current consumption vs. temperature in normal mode current consumption vs. temperature in power-down mode 0 1 2 3 4 5 ? 25 0 25 50 75 ta [ c ] i ope [ a] ? 50 100 0 0.02 0.04 0.06 0.08 0.10 ? 25 0 25 50 75 ta [c] i pdn [ a] ? 50 100 3. current consumption power voltage characteristics (ta = 25c) current consumption power supply voltage dependency 0 1 2 3 4 5 6 0 2 4 6 8 10 12 v dd [v] i ope [ a] 4. detection / release delay time temperature characteristics overcharge detection delay time vs. temperature overcharge release delay time vs. temperature 0.50 0.75 1.00 1.25 1.50 ? 25 0 25 50 75 ta [c] t cu [s] ? 50 100 10 20 30 40 50 60 ? 25 0 25 50 75 ta [c] t cl [ms] ? 50 100 overdischarge detection delay time vs. temperature 100 120 140 160 180 200 ? 25 0 25 50 75 ta [c] t dl [ms] ? 50 100 battery protection ic for single-cell pack s-8261 series rev.1.9 _00 seiko instruments inc. 28 overcurrent 1 detection delay time vs. temperature overcurrent 2 detection delay time vs. temperature 5 7 9 11 13 15 ? 25 0 25 50 75 ta [c] t iov1 [ms] ? 50 100 1.4 1.8 2.2 2.6 3.0 3.4 ? 25 0 25 50 75 ta [c] t iov2 [ms] ? 50 100 load short-circuiting delay time vs. temperature 0.16 0.20 0.24 0.28 0.32 0.36 0.40 ? 25 0 25 50 75 ta [c] t short [ms] ? 50 100 5. delay time power-voltage characteristics (ta = 25c) overcurrent 1 detection delay time vs. power supply voltage dependency overcurrent 2 detection delay time vs. power supply voltage dependency 5 7 9 11 13 15 2 2.5 3 3.5 4 4.5 v dd [v] t iov1 [v] 1.4 1.8 2.2 2.6 3.0 3.4 2 2.5 3 3.5 4 4.5 v dd [v] t iov2 [ms] load short-circuiting delay time vs. power supply voltage dependency 0.16 0.2 0.24 0.28 0.32 2.5 3 3.5 4 4.5 v dd [v] t short [ms] battery protection ic for single-cell pack rev.1.9 _00 s-8261 series seiko instruments inc. 29 6. co pin / do pin output current characteristics (ta = 25c) co pin source current characteristics v dd = 3.5 v, v m = v ss = 0 v co pin sink current characteristics v dd = 4.5 v, v m = v ss = 0 v ? 0.5 ? 0.4 ? 0.3 ? 0.2 ? 0.1 0 0 1 2 3 4 v co [v] i co [ma] 0.5 0.4 0.3 0.2 0.1 0 0123 5 v co [v] i co [ma] 4 do pin source current characteristics v dd = 3.5 v, v m = v ss = 0 v do pin sink current characteristics v dd = 1.8 v, v m = v ss = 0 v ? 0.5 ? 0.4 ? 0.3 ? 0.2 ? 0.1 0 0 1 2 3 4 v do [v] i do [ma] 0.5 0.4 0.3 0.2 0.1 0 00.51 2 v do [v] i do [ma] 1.5 ! "# # $ "# # $ % #&' $ ( ( ! "# $ "# $ % ) )* +, , ! - * !. / 0 )1 ( - 20 - 20 34 5 ! 6) 7, , )8 7 . ! )6 *) "# 9 $ "# 9 $ % 96 !"# ! $ % %&' (&' ) % %**+! ,-+$ .*+ .,," !/$!"$ 0 ! !+/.0 . 1 !*0" .#$! ( ," 0$,$+! ,+$*0" .#$! !# !+ !*,# $! ,/$!" . % %&' (&' ) % 2 2 !"# ! $ 3.."$! (+""" %+0 ( ( 4%5 6 % %&' (&' ) % +7 8 2 !"# ! $ ' /+"1.."+9 1 !*$ !"+/0+"! / the information described herein is subject to change without notice. seiko instruments inc. is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. the application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. when the products described herein are regulated products subject to the wassenaar arrangement or other agreements, they may not be exported without authorization from the appropriate governmental authority. use of the information described herein for other purposes and/or reproduction or copying without the express permission of seiko instruments inc. is strictly prohibited. the products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, without prior written permission of seiko instruments inc. although seiko instruments inc. exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may occur. the user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue. |
Price & Availability of S-8261AARMD-G2R-T2
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |